型号:

IRF7329TR

RoHS:
制造商:International Rectifier描述:MOSFET 2P-CH 12V 9.2A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
IRF7329TR PDF
标准包装 4,000
系列 HEXFET®
FET 型 2 个 P 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 12V
电流 - 连续漏极(Id) @ 25° C 9.2A
开态Rds(最大)@ Id, Vgs @ 25° C 17 毫欧 @ 9.2A,4.5V
Id 时的 Vgs(th)(最大) 900mV @ 250µA
闸电荷(Qg) @ Vgs 57nC @ 4.5V
输入电容 (Ciss) @ Vds 3450pF @ 10V
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SO
包装 带卷 (TR)
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